note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: FT0054A doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff 60 n 90 _e_ ___ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package 3 / 4 / 12 pin package voltage 90 = 900v drain current 60 = 60a sff60n90e 60 amp , 900 volts, 0.22 ? avalanche rated n-channel hipower mosfet features: ? rugged poly-si gate ? lowest on-resistance in the industry ? avalanche rated ? hermetically sealed, isolated package ? low total gate charge ? fast switching ? tx, txv, s-level screening available ? improved (r ds(on) q g ) figure of merit maximum ratings 5 / symbol value units drain - source voltage v dss 900 v gate ? source voltage continuous transient v gs + 20 + 30 v max. continuous drain current (package limited) @ t c = 25oc i d1 60 a max. instantaneous drain current (tj limited) @ t c = 25oc i d2 150 a max. avalanche current @ l= 0.1 mh i ar 60 a single and repetitive avalanche energy @ l= 0.1 mh e as e a r 4000 64 mj total power dissipation @ t c = 25oc p d 825 w operating & storage temperature t op & t stg -55 to +150 oc maximum thermal resistance (junction to case) r jc 0.15 oc/w notes: 12 pin package *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability ? contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / for lead bending options / pinout configurations ? contact factory. 4 / maximum current limited by package configuration 5 / unless otherwise specified, all electrical characteristics @25 o c.
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: FT0054A doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff60n90e electrical characteristics 5 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d = 1 ma bv dss 900 960 ?? v drain to source on state resistance v gs = 10v, i d = 18a, tj= 25 o c v gs = 10v, i d = 55a, tj=25 o c v gs = 10v, i d = 18a, tj= 125 o c r ds(on) ?? ?? ?? 155 175 300 200 220 ?? m ? gate threshold voltage v ds = v gs , i d = 1.0ma, tj= 25 o c v ds = v gs , i d = 1.0ma, tj= 125 o c v ds = v gs , i d = 1.0ma, tj= -55 o c v gs(th) 2.5 1.5 ?? 5.0 4.0 5.6 6.0 ?? 7.0 v gate to source leakage v gs = 20v, tj= 25 o c v gs = 20v, tj= 125 o c i gss ?? ?? 10 30 100 ?? na zero gate voltage drain current v ds = 720v, v gs = 0v, t j = 25 o c v ds = 900v, v gs = 0v, t j = 25 o c v ds = 720v, v gs = 0v, t j = 125 o c i dss ?? ?? 0.5 10 350 - 100 2000 a forward transconductance v ds = 15v, i d = 20a, t j = 25 o c g fs - 45 ?? mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 500v i d = 20a q g q gs q g d ?? ?? ?? 390 135 200 ?? ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 10v v ds = 450v i d = 10a t d(on) t r t d(off) t f ?? ?? ?? ?? 90 80 170 110 ?? ?? ?? ?? nsec diode forward voltage i f = 60a, v gs = 0v v sd ?? 0.80 1.2 v diode reverse recovery time reverse recovery charge i f = 36a, di/dt = 100a/usec t rr1 i rm1 q rr1 ?? ?? ?? 380 9 2000 ?? ?? ?? nsec a nc input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 9.2 1.4 380 ?? ?? ?? nf nf pf case outline: 12 pin package gate: pins 1, 12 source: pins 2,3,4,9,10,11 drain: pins 5,6,7,8 pins
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